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Home MOSFET Diodes Transistor MOSFET DMN26D0UFB4-7

Diodes Transistor MOSFET DMN26D0UFB4-7

FOB Reference Price:
MOQ:
1
Quantity:
72000
Port:
SZ/HK
Payment:
T/T,VISA,PayPal
Overview

Quick Details
  • Part Number:
  • DMN26D0UFB4-7
  • Package:
  • QFN
  • Manufacturer:
  • DIODES
  • D/C:
  • 1739
  • Place of Origin:
  • N/A
Packing & Delivery
  • Packing Details:
  • REEL
  • Delivery Time:
  • in stock
  • Supply Ability:
Payment
Shipping
  • Others Shipping:
Product Description

Product   AttributeAttribute Value
Manufacturer Diodes Incorporated 
Product Category MOSFET 
RoHS  Details  
Technology Si 
Mounting Style SMD/SMT 
Package / Case X2-DFN1006-3 
Number of Channels 1 Channel 
Transistor Polarity N-Channel 
Vds - Drain-Source Breakdown Voltage 20 V 
Id - Continuous Drain Current 240 mA 
Rds On - Drain-Source Resistance 3 Ohms 
Vgs th - Gate-Source Threshold Voltage 600 mV 
Vgs - Gate-Source Voltage 4.5 V 
Minimum Operating Temperature - 55 C 
Maximum Operating Temperature + 150 C 
Pd - Power Dissipation 350 mW 
Configuration Single 
Channel Mode Enhancement 
Packaging Cut Tape 
Packaging MouseReel 
Packaging Reel 
Product MOSFET Small Signal  
Series DMN26  
Transistor Type 1 N-Channel  
Brand Diodes Incorporated  
Forward Transconductance - Min 180 mS  
CNHTS 8541210000  
Fall Time 15.2 ns  
HTS Code 8541210095  
MXHTS 85412101  
Product Type MOSFET  
Rise Time 7.9 ns  
Factory Pack Quantity 3000  
Subcategory MOSFETs  
TARIC 8541210000  
Typical Turn-Off Delay Time 13.4 ns  
Typical Turn-On Delay Time 3.8 ns  
Unit Weight 0.000028 oz


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